Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells
Identifieur interne : 000093 ( Main/Repository ); précédent : 000092; suivant : 000094Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells
Auteurs : RBID : Pascal:14-0083009Descripteurs français
- Pascal (Inist)
- Travail sortie, Addition étain, Hauteur barrière, Cellule solaire silicium, Hétérojonction, Pulvérisation cathodique, Pulvérisation irradiation, Matériau dopé, Couche ITO, Cellule solaire, Procédé dépôt, Procédé fabrication, Mobilité Hall, Caractéristique électrique, Propriété électrique, Propriété surface, Tension circuit ouvert, Facteur remplissage, Oxyde d'indium, Zirconium, Matériau amorphe hydrogéné, Couche mince, Oxygène, Argon, ITO, a-Si:H.
- Wicri :
- concept : Oxygène.
English descriptors
- KwdEn :
- Amorphous hydrogenated material, Argon, Barrier height, Cathodic sputtering, Deposition process, Doped materials, Electrical characteristic, Electrical properties, Fill factor, Hall mobility, Heterojunction, ITO layers, Indium oxide, Manufacturing process, Open circuit voltage, Oxygen, Silicon solar cells, Solar cell, Sputtering, Surface properties, Thin film, Tin addition, Work function, Zirconium.
Abstract
We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The addition of oxygen (O2) to argon (Ar) flow ratio during the deposition process improves the Hall mobility of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an enhancement of work function while excess amount of O2 was not suitable for the electrical and surface properties of ITO:Zr films. The increase of O2/Ar flow ratio from 0% to 0.4% improved the work function from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters were found to be Voc = 710 mV, Jsc = 33.66 mA/cm2, FF=72.4%, and η = 17.31 % for the O2/Ar flow ratio of 0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (Voc) and fill factor (FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front barrier height in the HIT solar cell.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells</title><author><name>SHAHZADA QAMAR HUSSAIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, COMSATS Institute of Information and Technology</s1><s2>Lahore 54000</s2><s3>PAK</s3><sZ>1 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Lahore 54000</wicri:noRegion></affiliation></author><author><name>SUNBO KIM</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name>SHIHYUN AHN</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name>NAGARAJAN BALAJI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name>YOUNGSEOK LEE</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name>JAE HYEONG LEE</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name>JUNSIN YI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Energy Science, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0083009</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0083009 INIST</idno><idno type="RBID">Pascal:14-0083009</idno><idno type="wicri:Area/Main/Corpus">000107</idno><idno type="wicri:Area/Main/Repository">000093</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous hydrogenated material</term><term>Argon</term><term>Barrier height</term><term>Cathodic sputtering</term><term>Deposition process</term><term>Doped materials</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Fill factor</term><term>Hall mobility</term><term>Heterojunction</term><term>ITO layers</term><term>Indium oxide</term><term>Manufacturing process</term><term>Open circuit voltage</term><term>Oxygen</term><term>Silicon solar cells</term><term>Solar cell</term><term>Sputtering</term><term>Surface properties</term><term>Thin film</term><term>Tin addition</term><term>Work function</term><term>Zirconium</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Travail sortie</term><term>Addition étain</term><term>Hauteur barrière</term><term>Cellule solaire silicium</term><term>Hétérojonction</term><term>Pulvérisation cathodique</term><term>Pulvérisation irradiation</term><term>Matériau dopé</term><term>Couche ITO</term><term>Cellule solaire</term><term>Procédé dépôt</term><term>Procédé fabrication</term><term>Mobilité Hall</term><term>Caractéristique électrique</term><term>Propriété électrique</term><term>Propriété surface</term><term>Tension circuit ouvert</term><term>Facteur remplissage</term><term>Oxyde d'indium</term><term>Zirconium</term><term>Matériau amorphe hydrogéné</term><term>Couche mince</term><term>Oxygène</term><term>Argon</term><term>ITO</term><term>a-Si:H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The addition of oxygen (O<sub>2</sub>) to argon (Ar) flow ratio during the deposition process improves the Hall mobility of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an enhancement of work function while excess amount of O<sub>2</sub> was not suitable for the electrical and surface properties of ITO:Zr films. The increase of O<sub>2</sub>/Ar flow ratio from 0% to 0.4% improved the work function from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters were found to be V<sub>oc</sub> = 710 mV, J<sub>sc</sub> = 33.66 mA/cm<sup>2</sup>, FF=72.4%, and η = 17.31 % for the O<sub>2</sub>/Ar flow ratio of 0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (V<sub>oc</sub>) and fill factor (FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front barrier height in the HIT solar cell.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>122</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>SHAHZADA QAMAR HUSSAIN</s1></fA11><fA11 i1="02" i2="1"><s1>SUNBO KIM</s1></fA11><fA11 i1="03" i2="1"><s1>SHIHYUN AHN</s1></fA11><fA11 i1="04" i2="1"><s1>NAGARAJAN BALAJI</s1></fA11><fA11 i1="05" i2="1"><s1>YOUNGSEOK LEE</s1></fA11><fA11 i1="06" i2="1"><s1>JAE HYEONG LEE</s1></fA11><fA11 i1="07" i2="1"><s1>JUNSIN YI</s1></fA11><fA14 i1="01"><s1>Department of Energy Science, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, COMSATS Institute of Information and Technology</s1><s2>Lahore 54000</s2><s3>PAK</s3><sZ>1 aut.</sZ></fA14><fA20><s1>130-135</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000501168480180</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0083009</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The addition of oxygen (O<sub>2</sub>) to argon (Ar) flow ratio during the deposition process improves the Hall mobility of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an enhancement of work function while excess amount of O<sub>2</sub> was not suitable for the electrical and surface properties of ITO:Zr films. The increase of O<sub>2</sub>/Ar flow ratio from 0% to 0.4% improved the work function from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters were found to be V<sub>oc</sub> = 710 mV, J<sub>sc</sub> = 33.66 mA/cm<sup>2</sup>, FF=72.4%, and η = 17.31 % for the O<sub>2</sub>/Ar flow ratio of 0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (V<sub>oc</sub>) and fill factor (FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front barrier height in the HIT solar cell.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Travail sortie</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Work function</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Función de trabajo</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Addition étain</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Tin addition</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Adición estaño</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Hauteur barrière</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Barrier height</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Altura barrera</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Cellule solaire silicium</s0><s5>04</s5></fC03><fC03 i1="04" 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